Electronic Transport in Ultrathin Heterostructures.

Abstract

A detailed study of the optical and electronic transport studies of ultrathin GaAlAs/GaAs heterostructures is reported. The measurements are reported on GaAlAs multiple quantum well heterostructures (MQW) and superlattices (SL) with layer dimension ranging from 200 to 30 A grown by metalorganic chemical vapor deposition (MOCVD). The measurements show that laser emission from these structures lie 36 meV below the absorption edge, consistent with LO phonon emission. The transport properties of modulation doped superlattices and single heterostructures demonstrate enhanced room temperature and low temperature mobility. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA108390

Entities

People

  • P. D. Dapkus

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Argon Lasers
  • Chemical Vapor Deposition
  • Electrical Engineering
  • Electron Microscopes
  • Electron Microscopy
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Laser Diodes
  • Lasers
  • Optical Properties
  • Power Electronics
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing