Reliability Investigation of Low Noise GaAs FETs.

Abstract

The objective of this program is to assess the reliability and operating life characteristics of low noise, small signal, microwave, n-channel, gallium arsenide (GaAs), metal epitaxial semiconductor field effect transistors (MESFETs) with a Schottky-barrier gate, and to identify associated failure mechanisms with notice to the supplier that the devices would be used in a testing program sponsored by the Department of Defense and that results would be reported to the Government. The FETs obtained represented a broad cross section of currently available devices, and included both gold-based and aluminum gate metallizations with gate lengths nominally from 0.5 microns to 1.2 microns.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1981
Accession Number
ADA108396

Entities

People

  • Lawrence S. Bowman
  • W. Tarn

Organizations

  • Hughes Aircraft Company

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Chemical Reactions
  • Environmental Tests
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Gallium Arsenides
  • High Temperature
  • Life Tests
  • Materials
  • Measurement
  • Microwave Integrated Circuits
  • Plastic Explosives
  • Semiconductor Devices
  • Semiconductors
  • Signal Generators
  • Test And Evaluation
  • Test Equipment

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics