Microwave Semiconductor Research - Materials, Devices, Circuits.
Abstract
The growth and characterization of high purity and chromium doped GaAs and Al, GaAs for buffer layers in high performance GaAs FET's has been carried out. Deep level transient spectroscopy has been used to measure electron traps in Schottky diodes and GaAs FET's. The investigation of microwave field-effect transistor performance limits set by layer composition and contact geometry has been carried out. The several critical physical electronics parameters for very high voltage operation of GaAs FET's have been determined. The electric field distribution and the parasitic output conductance due to buffer layer current were studied and optimized. The use of MBE tailored doping profiles for improved microwave device operation has been studied. Improved linearity of GaAs power FET devices and the optimization of doping planes for potential barriers and other purposes were also carried out. GaAs/Al, GaAs selectively doped heterojunctions were grown by MBE and were studied for potential use in high performance transistors. High electron mobility (80,000 sq cm/v-s) at 77K was first obtained in this effort, following the optimization of the growth conditions of the Al, GaAs. In addition, high resistivity Al, GaAs buffer layers for power FET's were obtained.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1981
- Accession Number
- ADA108399
Entities
People
- C. E. C. Wood
- D. W. Woodard
- J. M. Ballantyne
- Lester F. Eastman
- W. Ku
Organizations
- Cornell University