Simulation of Pulsed Impatt Oscillators and Injection-Locked Amplifiers.

Abstract

A method for simulating the dynamic behavior of pulsed IMPATT oscillators using a quasi-static approximation is presented. The method used to characterize the IMPATT diode is explained. A particular circuit model is used which models the cylindrical cavity power combining circuit. The overall device-circuit interaction technique is outlined. Simulation results for a high-low, single-drift X-band GaAs IMPATT are presented. The method presented here can be employed for any type of IMPATT device. The pulsed oscillator properties of double-drift IMPATT diode structures are presently being investigated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA108483

Entities

People

  • D. F. Peterson
  • George I. Haddad
  • R. K. Mains

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Cavity Resonators
  • Electrons
  • Engineering
  • Frequency
  • Impatt Diodes
  • Impedance
  • Michigan
  • Microwaves
  • Physics
  • Physics Laboratories
  • Radio Frequency Power
  • Resonant Circuits
  • Resonant Frequency
  • Thermal Instability
  • X Band

Readers

  • Computational Modeling and Simulation
  • Electronics Engineering
  • Semiconductor Device Technology