Submicron FETs Using Molecular Beam Epitaxy.
Abstract
Using electron-beam exposure and MBE GaAs, FETs have been fabricated with gate lengths of around 0.25 micron. A noise figure of 1.1 dB with an associated gain of 14 dB has been measured at 8 GHz. A new technique to increase the gate cross-sectional area by employing a mushroom gate profile reduced the gate resistance by about a factor of six, but this dramatic reduction in input resistance resulted in only 0.2-0.3 dB improvement in the measured minimum noise figure. Because of this, it is felt that there is a problem of matching such a high Q input with the rather lossy microstrip technique used, resulting in an inaccurate measurement of the noise figure. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1981
- Accession Number
- ADA108556
Entities
People
- C. Hooper
- R. Chow
- S. Bandy
- T. Gibbs
- Y Chai