Optical Investigations of the Recombination Processes in Laser-Annealed and Thermally-Annealed Semiconductors.
Abstract
Electron-beam-induced current and low temperature photoluminescence have been used as minority-carrier probes to investigate the perfection of beam-annealed silicon. Results for both laser and electron-beam annealing are reported. For CW laser annealing of ion implantation damage, the range of laser power over which good quality annealed material can be achieved is very limited, and strongly dependent on the substrate temperature during the anneal. At relatively high laser power, Laser-induced damage is observed, and misfit dislocations are introduced for laser power just below that required to melt the substrate. Superior results are obtained with the use of a scanning electron beam for annealing: the range of beam power is broader, and the amount of beam overlap for subsequent scans required to achieve good annealing is less for the electron-beam case compared to the case of laser annealing. Both EBIC and photoluminescence results indicate that the laser-induced damage is produced deeper in the substrate than the implanted layers. Estimates of the lattice displacement resulting from strain after laser annealing are made from the details of the photoluminescence spectra; this lattice displacement is found to be small, corresponding to 0.01% of the lattice constant. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1981
- Accession Number
- ADA108627
Entities
People
- James L. Merz
Organizations
- University of California, Santa Barbara