Growth of HgCdTe by Modified Molecular Beam Epitaxy

Abstract

Thick Hg sub 1-x Cd sub x Te films (> 5 micron were deposited on CdTe sub x (111) A and other substrates by evaporating either (HgTe) sub 1 - x/(CdTe) sub x mixture or Hg sub 1-x Cd sub x Te crystals with a pulsed laser. The films were single phase and stoichiometric. All films showed preferential (111) texture. Electrical properties were characterized by Hall measurements, for a x = 0.3 film after annealing, typical values of carrier concentration and mobility were 1-2 x ten to the 17th power/ccm and 3500-6000 sq cm/Vsec, respectively.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1981
Accession Number
ADA108750

Entities

People

  • J. T. Cheung

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carrier Mobility
  • Diffraction
  • Diffraction Analysis
  • Electrical Properties
  • Films
  • High Temperature
  • Intensity
  • Lasers
  • Materials
  • Measurement
  • Mobility
  • Optical Properties
  • Photonic Metamaterials
  • Thick Films
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition