SIMS Studies on Anomalous Behavior of Phosphorus and Other Implants in Silicon

Abstract

A phosphorus implant in p-type silicon was analyzed by SIMS, and both the implant profile and the matrix signal were observed to exhibit some anomalous behavior. Further studies revealed the same behavior in other implants. This phenomenon was observed when an n-type dopant was implanted into a p-type matrix, or vice versa. However, some exceptions arose, making the interpretation difficult. The use of matrix signal normalization was adopted and found to improve the results.

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Document Details

Document Type
Technical Report
Publication Date
Dec 17, 1981
Accession Number
ADA108870

Entities

People

  • Dachang Zhu
  • George H. Morrison
  • Paul K. Chu

Organizations

  • Cornell University Department of Chemistry and Chemical Biology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • California
  • Chemistry
  • Data Acquisition
  • Elements
  • Gaussian Distributions
  • Implantation
  • Ion Implantation
  • Ions
  • Mass Spectrometry
  • Materials
  • Materials Laboratories
  • Materials Science
  • Military Research
  • New York
  • Radiation Effects
  • Standards
  • United States

Fields of Study

  • Materials science

Readers

  • Educational Psychology
  • Semiconductor Device Technology