Ion Implantation and Laser Processing of III-V Compound Semiconductors with Applications to the Fabrication of Microwave Devices

Abstract

Research was carried out on laser processing of III-V Compound semiconductors, concentrating on the mechanisms that are responsible for annealing ion implanted dopants in GaAs and on the possibility of obtaining laser-assisted diffusion of dopants. Seven papers describing this work have been written during the period covered by this report. A brief overview of these papers is given. The full papers are attached for detailed presentation of experimental conditions, theoretical calculations and results. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA109033

Entities

People

  • James F. Gibbons

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Argon Lasers
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Electron Beams
  • Electronics Laboratories
  • Energy
  • Fabrication
  • Heat Energy
  • Ion Lasers
  • Laser Beams
  • Lasers
  • Materials
  • New York
  • Semiconductors
  • Spectra
  • Thermal Diffusion

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics