Impurity and Defect Characterization in Epitaxial GaAs, InP and the Ternary and Quaternary Compound Semiconductors
Abstract
An ultimate method for the unambiguous identification of donors in epitaxial GaAs and related compounds has been devised and demonstrated. A specimen is grown by means of the molecular beam epitaxy technique and is lightly doped with a single donor element during growth so as to render the specimen n-type. The far infrared photoconductivity method of spectroscopy is used to determine the energy difference between the electron ground state and the next higher excited state (2p, m = -1) at low temperature and in high intensity magnetic fields. A 'signature curve' of energy vs. magnetic field intensity is generated for various values of applied magnetic field intensity. Thereafter, any time that this particular element is present as a residual donor in any other specimen, a single measurement at any field will yield a point which must lie on the signature curve of the particular donor element. By this means any residual donor can be identified without ambiguity. We have generated and published signature curves for Sn, Se, Si, Ge and sulfur. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 14, 1981
- Accession Number
- ADA109052
Entities
People
- Kenneth J. Button
- M. N. Afsar
Organizations
- Massachusetts Institute of Technology