Fermi Level Pinning at Semiconductor Electrodes.

Abstract

The shift in V(fb) of several single crystal semiconductors (p-Si, p-GaAs, n-TiO2, n-Cds, n-MoSe2, n- and p-WSe2) was investigated in MeCN containing a number of redox couples. While V(fb) shifts with V(redox) for p-Si, p-GaAs, n-TiO2 and n-Cds for the layered compounds (n-MoSe2, n- and p-WSe2) was essentially independent of V(redox). (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 21, 1981
Accession Number
ADA109478

Entities

People

  • Allen J. Bard
  • Bob Lee Wheeler
  • F. -r. Fan
  • G. Nagasubramanian

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Crystals
  • Electrodes
  • Electrolytes
  • Energy Bands
  • Energy Levels
  • Fermi Levels
  • Materials
  • Materials Science
  • Military Research
  • New York
  • Photoelectrochemical Cells
  • Semiconductors
  • Single Crystals
  • Solid State Physics
  • Universities

Fields of Study

  • Materials science

Readers

  • Electrochemical Surface Science
  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene