Raman Study of the Mechanism of Electrical Switching in Cu TCNQ Films.

Abstract

The mechanism of electrical switching in Cu/Cu TCNQ films has been studied in situ by Raman spectroscopy. The initial film is Cu(+)TCNQ(-), while neutral TCNQ was found to be present in the system after electrical switching, produced by a redox reaction caused by the field. The amount of TCNQ after switching was found to increase with the time of application of the electric field, while the amount of Cu TCNQ was reduced. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 05, 1982
Accession Number
ADA109737

Entities

People

  • C. H. Tzinis
  • E. I. Kamitsos
  • W. M. Risen Jr

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Charge Transfer
  • Chemical Engineering
  • Chemistry
  • Electric Fields
  • Engineering
  • Films
  • Geometry
  • Materials
  • Materials Science
  • Military Research
  • New Jersey
  • Oxidation Reduction Reactions
  • Physics
  • Raman Spectra
  • Raman Spectroscopy
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Astronomy and Astrophysics.
  • Electrical Engineering
  • Thin Film Deposition Science.