The Formation of the Schottky Barrier at the V/Si Interface.

Abstract

Synchrontron radiation photoemission measurements have been used to study the behavior of the Schottky barrier height 00 bn and electronic structure of the V/Si interface for both cleaved Si (111)-(2x1) and sputter-cleaned Si(111)-(7x7) surfaces. Although the Schottky barrier height 0 bn of the clean surface is influenced by surface reconstruction, the barrier becomes pinned at a position essentially independent of the initial clean surface structure.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1981
Accession Number
ADA109912

Entities

People

  • B. Reihl
  • G. W. Rubloff
  • J. G. Clabes
  • R. J. Purtell

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Spectra
  • Band Structures
  • Chemical Reactions
  • Chemistry
  • Energy Bands
  • Fermi Levels
  • Films
  • Materials
  • Materials Science
  • Metal Films
  • Military Research
  • New York
  • Physics
  • Solid State Physics
  • Synchrotron Radiation
  • United States
  • Valence Bands

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene