Chemically Derivatized Semiconductor Photoelectrodes.

Abstract

Highlights of research results from the chemical derivatization of n-type semiconductors with (l,l'-ferrocenediyl)dimethylsilane, (1) and its dichloro analogue, (2) and from the derivatization of p-type semiconductors with (N,N'-bis(3-trimethoxysilyl)propyl)-4,4'-bipyridinium)dibromide, (3) are presented. Research Shows that molecular derivatization with (2) can be used to suppress photoanodic corrosion of n-type Si; derivatization of p-type Si with (3) can be used to improve photoreduction kinetics of horseheart ferricytochrome c; derivatization of p-type Si with (3) followed by incorporation of Pt(O) improves photoelectrochemical H2 production efficiency. Strongly interacting reagents can alter semiconductor/electrolyte interface energetics and surface state distributions as illustrated by n-type WS2/I(-) interactions and by differing etch procedures for n-type CdTe. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 04, 1982
Accession Number
ADA110087

Entities

People

  • Mark S. Wrighton

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Catalysis
  • Charge Carriers
  • Chemical Reaction Properties
  • Chemical Synthesis
  • Chemistry
  • Electron Transfer
  • Energy Bands
  • Materials
  • Materials Science
  • Military Research
  • N Type Semiconductors
  • New York
  • P Type Semiconductors
  • Polymers
  • Semiconductor Devices
  • Semiconductors
  • United States

Fields of Study

  • Chemistry
  • Materials science

Readers

  • Electrochemical Surface Science
  • Integrated Circuit Design and Technology.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics