Performance Limits on GaAs FET Large- and Small-Signal Circuits.

Abstract

A describing function approach to large-signal frequency-domain simulations of nonlinear microwave circuits is presented. It is used to examine gain saturation and harmonic distortion of a 0.5 micron gate FET. The simulation uses a previously reported FET model, modified to include gate breakdown and substrate leakage current. Temperature effects are studied. It is found that gain saturation does not depend on gate breakdown. The model is verified by comparing theoretical and experimental performance. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA110736

Entities

People

  • D. R. Green Jr.
  • F. R. Rosenbaum

Organizations

  • University of Washington

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Circuit Analysis
  • Compound Semiconductors
  • Computational Science
  • Differential Equations
  • Electrical Engineering
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • Measurement
  • Microwave Frequency
  • Modules (Electronics)
  • Partial Differential Equations
  • Power Electronics
  • Semiconductors
  • Standing Waves
  • Two Dimensional
  • Waveforms

Fields of Study

  • Engineering
  • Physics

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Integrated Circuit Design and Technology.