Raman Spectroscopy of Solids.

Abstract

Using resonant Raman scattering at the E1 gap we have investigated the scattering by coupled LO phonon-collective inter-subband charge carrier excitation in quasi-two-dimensional plasmas at the InAs surface of MOS junctions found on n- and p- InAs surfaces. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 28, 1981
Accession Number
ADA110740

Entities

People

  • Elias Burstein

Organizations

  • University of Pennsylvania

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Acids
  • Benzoic Acids
  • Charge Carriers
  • Electric Fields
  • Electromagnetic Fields
  • Electromagnetic Radiation
  • Indicator Dyes
  • Inelastic Scattering
  • Light Scattering
  • Raman Scattering
  • Raman Spectroscopy
  • Roughness
  • Scattering
  • Semiconductors
  • Students
  • Surface Roughness
  • Two Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

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