Correlation between the Composition/Bonding and Insulating Properties of Grown Oxides on III-V Compound Semiconductors.

Abstract

This research investigated the composition, structure and electrical properties of thermal and anodic oxides of the III-V compounds. The composition of the oxides was determined by XPS profiling. Models for the structure of the oxides were obtained from current-voltage, X-ray diffraction and XPS data. The chemical composition and electrical properties of anodic oxides of InP were found to be highly dependent on the growth conditions but the oxides on GaAs and InAs were not.

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Document Details

Document Type
Technical Report
Publication Date
Jan 06, 1982
Accession Number
ADA110743

Entities

People

  • C. W. Wilmsen

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Composition
  • Compound Semiconductors
  • Dielectrics
  • Diffraction
  • Electrical Properties
  • Field Effect Transistors
  • Military Research
  • Oxides
  • Scientists
  • Semiconductors
  • Students
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene