RF Plasma Annealing on MOS Structures.

Abstract

Very Large Scale Integrated Circuits (VLSI) require advanced processing techniques to achieve the necessary pattern resolution. Some of these techniques, including E-beam or X-ray lithography, plasma or reactive ion etching (RIE), and ion implantation, use energetic particles or photons to overcome the resolution limitations associated with the more conventional proesses. As a result, varying degree of radiation damage is frequently introduced in the Metal-SiO2-Si (MOS) device structure, which causes severe degradation of the circuit performance and reliability. Ever since the radiation effect was recognized as a potential problem for the development of VLSI technology, it has stimulated substantial research interest in many laboratories, in an effort to achieve sufficient level of scientific understanding, and to develop techniques that can best solve this problem.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1981
Accession Number
ADA110785

Entities

People

  • Maw-rong Chin

Organizations

  • Yale University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemical Reactions
  • Chemistry
  • Electromagnetic Fields
  • Electron Density
  • Electron Energy
  • Energy Bands
  • Energy Transfer
  • Integrated Circuits
  • Ionization
  • Material Degradation Processes
  • Materials Processing
  • Materials Science
  • Semiconductor Devices
  • Semiconductors
  • Space Charge
  • Spectra

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Systems Analysis and Design