Spontaneous Oscillations in Gallium Arsenide Field Effect Transistors

Abstract

We present results of experiments and numerical simulations designed to reveal the presence of spontaneous oscillations arising from negative differential mobility effects in gallium arsenide field effect transistors. The measurements include d.c. and pulsed current/voltage vs temperature characterization, sampling scope measurements, spectral analysis to 40 GHz and observation of light emission. The simulation is a time dependent large signal transient analysis arising from a fully two-dimensional solution of the self-consistent potential and charge within the device.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA110855

Entities

People

  • D. K. Ferry
  • H. L. Grubin
  • K. R. Gleason

Organizations

  • United Technologies Corporation

Tags

DTIC Thesaurus Topics

  • Analyzers
  • Boundaries
  • Circuits
  • Current Density
  • Electric Fields
  • Energy Bands
  • Field Effect Transistors
  • Frequency
  • Gallium
  • Gallium Arsenides
  • Instability
  • Laser Diodes
  • Measurement
  • Military Research
  • Space Charge
  • Spectrum Analyzers
  • Transistors

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics