Large-Signal Characterization, Amplifier Design, and Performance of K-Band GaAs MESFETS.

Abstract

Recent advances in Gallium Arsenide field-effect transistor technology have extended the power amplification capabilities of FETs to the K-Band frequency range. FETs with performance capability of 0.5 watt power output at 20 GHz have been developed. Large-signal S-parameter characterizations of these devices have been utilized in designing power and amplifiers. Transistor performance capability is discussed together with the performance of experimental amplifier designs realized in a microstrip environment. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 11, 1981
Accession Number
ADA110873

Entities

People

  • Carl D. Berglund

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Artificial Satellites
  • Bandwidth
  • Calibration
  • Circuits
  • Contracts
  • Elements
  • Field Effect Transistors
  • Frequency
  • Frequency Bands
  • K Band
  • Networks
  • Optical Materials
  • Scattering
  • Semiconductors
  • Transistors
  • Transmission Lines

Readers

  • Integrated Circuit Design and Technology.
  • Microwave Engineering.

Technology Areas

  • Microelectronics