Fabrication and Properties of Multilayer Structures
Abstract
The goal of this program is to develop vapor deposition processes for application to integrated circuit technology, particularly multilayer applications. Its purpose is to investigate vapor deposition techniques that offer potential for synthesis of materials having new, unique structures and/or higher quality than currently attainable. In this period, an in-situ argon ion- gun cleaning technique was to strip the native SiO2 film from the Si substrates prior to the actual deposition of SiO(x) and SiC films. Etch rate data for the native oxide on SiO2 and the relative film thickness for reactively sputtered SiO2 films as a function of substrate temperature for etched substrates was gathered. The relative deposition rate and film texture for single-source sputtered SiC films as a function of substrate type, orientation and film texture was obtained. Exploratory films of SiO(x), WO(x) and NbC(0.88) were fabricated using the sequential deposition of atomic layers technique. In the theoretical area, the CNDO/2 technique was used to determine the energies of formation for bridging oxygen vacancies, and Frenkel defects for a pair of silica structural units (dimer and tetramer ring). In addition, calculations were made for the adsorption of different molecular chemical species (in the parallel configuration) at the bridging oxygen site of a silica dimer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1981
- Accession Number
- ADA111001
Entities
People
- A. Savan
- L. Nagel
- T. W. Barbee Jr.
- W. A. Tiller
- W. Dibble
Organizations
- Stanford University