Depth-Resolved Luminescence of Gallium Arsenide Using Ion Etching.

Abstract

A system was assembled for obtaining depth-resolved, low-temperature luminescence data from GaAs using ion etching. This system was tested on virgin and silicon implanted, liquid-encapsulated Czochralski (LEC) grown GaAs. It was found to be effective in detecting lattice damage in annealed and unannealed Si-implanted GaAs.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1981
Accession Number
ADA111139

Entities

People

  • Myron Travis Maclin

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystal Structure
  • Detectors
  • Electron Guns
  • Electrons
  • Elements
  • Energy Bands
  • Energy Levels
  • Free Electrons
  • Gallium Arsenides
  • Low Temperature
  • Luminescence
  • Materials Laboratories
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems