Effects of Radiation on Oxide Materials.
Abstract
Dry and wet (pyrogenic steam)-grown thermal oxides on (100) silicon were made for an investigation of the radiation sensitivity of MOS devices. Oxides were grown under conditions known to produce state-of-the-art hardened oxides as well as very soft oxides. MOS capacitors were fabricated with thin semi-transparent and thick aluminum gates for irradiation with 10.2-eV vacuum ultraviolet (VUV) photons and 1-MeV electrons, respectively. Electrical measurements were made on MOS capacitors to determine trapped-charge density, charge transport, and thermal-trap depth, using high frequency and quasi-static CV, triangular voltage sweep (TVS), and thermally stimulated current (TSC) techniques. TSC measurements taken on irradiated capacitors to characterize the thermal-energy trap spectra gave varied results. Analytical measurements of interface stoichiometry and impurity profiles were done by the use of ion-scattering spectroscopy (ISS), x-ray photoelectron spectroscopy (XPS), and secondary-ion mass spectroscopy (SIMS).
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1981
- Accession Number
- ADA111149
Entities
People
- Gary W. Hughes
- John H. Thomas Iii
Organizations
- Sarnoff Corporation