Monolithic GaAs Dual-Gate FET Phase Shifter.

Abstract

The objective of this program is to develop a monolithic GaAs dual-gate FET phase shifter, operating over the 4- to 8-GHz frequency band and capable of a continuously programmable phase shift from 0 deg through N times 360 deg where N is an integer. The phase shift is to be controllable to within +3 deg. This phase shifter will be capable of delivering an output power up to 0 dBm with an input and output VSWR of less than 1.5:1. Progress 1. The photomask of a 0 to 90 deg monolithic GaAs dual-gate FET phase shifter has been procured, and we are in the process of fabricating the phase shifter. 2. We have designed and fabricated a 50 ohm, 4-line interdigitated coupler. Also, we have designed and fabricated a 25-ohm, 6-line interdigitated coupler. The performance of both couplers agrees quite well with the theoretical results. Technical Problems there was no major problem during this period.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1981
Accession Number
ADA111164

Entities

People

  • M Kumar
  • R. Menna
  • S. N. Subbarao

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Broadband
  • Computer-Aided Design
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Frequency Bands
  • Insertion Loss
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Phase Shift
  • Radar
  • Semiconductors

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Phased Array Antenna Design.