Preparation and Properties of PdPSe Single Crystals.

Abstract

PdPSe is an n-type semiconductor which shows weak Pauli paramagnetic behavior. Its electronic properties are consistent with the presence of delocalized electrons in the material. Photoelectronic measurements indicate that PdPSe has high quantum efficiencies below 800 nm. The indirect optical band gap is 1.28(2) eV. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 11, 1982
Accession Number
ADA112166

Entities

People

  • Aaron Wold
  • James V. Marzik
  • Kirby Dwight
  • Robert N. Kershaw

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Absorption Spectra
  • Charge Carriers
  • Chemistry
  • Electrodes
  • Energy Bands
  • Engineering
  • Jet Propulsion
  • Materials
  • Materials Science
  • Measurement
  • Military Research
  • N Type Semiconductors
  • Photoelectrochemical Cells
  • Quantum Efficiency
  • Rhode Island
  • Semiconductors
  • Solid State Chemistry

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  • Physics

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  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots