A Proximity effect Correction Program for Electron Beam Lithography.

Abstract

A proximity effect correction program implementing the self-consistent correction algorithm has been developed. The program calculates recommended electron beam exposures given as input, the pattern to be written and the beam scattering parameters. Predicted dose patterns resulting from the recommended exposures are also calculated. Results of sample calculations are shown. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1982
Accession Number
ADA112233

Entities

People

  • H. L. Berkowitz
  • R. A. Lux

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Algorithms
  • Backscattering
  • Chemistry
  • Computer Programs
  • Electron Beam Lithography
  • Electron Beams
  • Electron Energy
  • Electron Scattering
  • Electronic Materials
  • Electronics
  • Electrons
  • Linear Systems
  • Lithography
  • Procedures (Computers)
  • Scattering
  • Security
  • Simulations

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Nanofabrication and Microfabrication.

Technology Areas

  • Directed Energy
  • Microelectronics