A Proximity effect Correction Program for Electron Beam Lithography.
Abstract
A proximity effect correction program implementing the self-consistent correction algorithm has been developed. The program calculates recommended electron beam exposures given as input, the pattern to be written and the beam scattering parameters. Predicted dose patterns resulting from the recommended exposures are also calculated. Results of sample calculations are shown. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1982
- Accession Number
- ADA112233
Entities
People
- H. L. Berkowitz
- R. A. Lux
Organizations
- United States Army Communications-Electronics Command