Preparation and Characteristics of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis.

Abstract

Thin layers of SiC were electrodeposited from Li2CO3/SiO2 melts onto alpha-SiC substrates at 1000 - 1050 C using potential differences around -0.5V versus polycrystalline SiC anodes. The layers appear to be expitaxial. Although conditions were found under which the melt exhibited good long term stability, attempts to grow bulk SiC crystals were handicapped by delamination of the seed crystals. Attempts to electrodeposit SiC from K2SiF6/Li2CO3/LiF/KF and SiO2/Na2CO3/NaBO2/LiF melts yielded botryoidal deposits containing excess carbon. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1981
Accession Number
ADA112367

Entities

People

  • D. Elwell
  • Robert S. Feigelson
  • Theodore H. Geballe

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemistry
  • Coatings
  • Corrosion Resistance
  • Crystal Growth
  • Crystals
  • Electrodeposition
  • Electrolysis
  • Heat Energy
  • Heat Shields
  • High Temperature
  • Lithium Compounds
  • Materials
  • Materials Processing
  • Melting Point
  • Optical Materials
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.