Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices

Abstract

This report covers work on enhanced electron injection into SiO2, studies of limitations on the number of useful write/erase cycles for EAROS devices due to electron trapping in the SiO2, the physics and design of EAROS devices using Si-rich SiO2 charge injectors, and the capture and release of electrons on Na(+)-related sites in SiO2. An automatic system is described for making write/erase cycling measurements of EAROS devices.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1982
Accession Number
ADA112501

Entities

People

  • D. J. Dimaria
  • D. W. Dong
  • J. A. Calise
  • K. M. Demeyer
  • L. M. Ephrath

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Conduction Bands
  • Crystal Structure
  • Electrons
  • Energy Bands
  • Engineering
  • Etching
  • Fabrication
  • Field Effect Transistors
  • Materials
  • Measurement
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxide Films
  • Semiconductors
  • Solid State Physics

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Urban Planning and Geography.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene