Carrier Localisation in Inversion Layers and Impurity Bands.

Abstract

This report is principally concerned with our work on the physics of transport in two dimensional systems. We show that the logarithmic corrections to the conductance of Si inversion layers arise from both interaction and localization effects. Application of a magnetic field suppresses localization and enhances the role of interactions. At certain values of magnetic field both effects can be present, but with a different stability against increasing temperature. Consequently, heating the electron gas with an electric field allows the observation of a transition between them. Decreasing elastic scattering decreases the magnetic field required to suppress localization, as the enhancement of the interaction effect arises from spin a clear separation is obtained between the mechanisms.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1981
Accession Number
ADA112673

Entities

People

  • M. Pepper

Organizations

  • University of Cambridge

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Elastic Scattering
  • Electric Fields
  • Electron Electron Interactions
  • Electron Gas
  • Electron Mobility
  • Electron Scattering
  • Electrons
  • Energy
  • Energy Bands
  • Energy Transfer
  • Equations
  • Fermi Levels
  • Hall Effect
  • Inelastic Scattering
  • Low Temperature
  • Magnetic Fields
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene