Electrooptical Devices.

Abstract

The spectral dependence of the optical absorption introduced in InP and GaInAsP by proton bombardment has been measured as a function of dose. A study has been made of the etching technique used to delineate the active GaInAsP layer in GaInAsP/InP double-heterostructure lasers. A new method has been demonstrated for the prevention of thermal etching or decomposition of InP substrates prior to liquid-phase-epitaxial (LPE) growth. High-quality n(+) -InP layers over InGaAs have been grown from Sn solutions.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1981
Accession Number
ADA112890

Entities

People

  • Charles E. Hurwitz

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Avalanche Photodiodes
  • Band Gaps
  • Crystal Growth
  • Crystals
  • Detectors
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Heat Treatment
  • Laser Diodes
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Measurement
  • Optical Properties
  • Semiconductors
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition