Development of a Surface Technology for GaAs Devices.

Abstract

The method of two-step anodisation was investigated further. It was found that inversion-type capacitance increases can also be obtained occasionally by anodizing an Al film only on GaAs. Light emission studies have shown that the emission efficiency depends on the quality of the interface layer. Pulsed-laser experiments for the generation and excitation of electron-hole pairs have demonstrated the importance of charge trapping in an interface region extending more than 100 A into the oxide. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1981
Accession Number
ADA112913

Entities

People

  • E. Huber
  • H. L. Hartnagel
  • K. Roehkel
  • W. Schmolla

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Anodizing
  • Charge Carriers
  • Chemistry
  • Compound Semiconductors
  • Conduction Bands
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • New York
  • Optical Properties
  • Oxides
  • Power Electronics
  • Semiconductors
  • Solid State Electronics

Readers

  • Information Retrieval
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Superconducting Magnet Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene