Integrated Optical Transmitter and Receiver
Abstract
Integrated Electronic Driver Development--Of the three start-up lots (2 wafers each) for the integrated electronic driver processing initiated last month, the first lot was completed. This included sulphur implanted/diffused planar TELD's and Si implanted FET's. Work continued on the high-speed transmitter packaging. Laser Development--Further laser development await the servicing of the GaAlAs/GaAs MOCVD reactor (see section D). During this period, work focused on continued high-speed measurements of narrow-diffused stripe laser structures grown by MOCVD, to be implemented into the integrated transmitter structure. Problems Encountered and/or Anticipated Work continued on isolating causes for growth control problems encountered last month on the GaAlAs/GaAs MOCVD system. These include inability to accurately tune the properties of the GaAlAs layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 18, 1981
- Accession Number
- ADA112967
Entities
People
- P. D. Dapkus