Elementary Excitations in Narrow-Gap Semiconductors by Picosecond Infrared Pulses.

Abstract

In this grant research we have demonstrated efficient switching of high-power carbon dioxide laser radiation at picosecond speeds in the narrow-gap semiconductors indium antimonide, lead telluride, and mercury cadmium telluride. Excitation from a modelocked Nd: glass laser has been used to generate pulses of 10 micrometer radiation of approximately 2psec in duration by a dense transient electron-hole gas in these materials. This work takes advantage of the unique material properties of the narrow-gap semiconductors. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 23, 1981
Accession Number
ADA113039

Entities

People

  • A. V. Nurmikko

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Carbon Dioxide Lasers
  • Chemistry
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Infrared Radiation
  • Laser Pulses
  • Materials
  • Narrow Band Gap Semiconductors
  • Optics
  • Picosecond Time
  • Polaritons
  • Semiconductors
  • Solid State Physics
  • Two Photon Absorption

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics