Investigation of the Current Voltage Relationship for Low Barrier Schottky Diodes.

Abstract

A model is developed for the current voltage characteristics of metal, p-type semiconductor Schottky barriers. The model accounts for transition of electrons from the semiconductor valence band to empty states below the metal Fermi energy. These transitions lead to an effective barrier energy that is lower than predicted by classical models. The model also includes two junction current mechanisms that give rise to higher reverse currents than that predicted classically. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1982
Accession Number
ADA113211

Entities

People

  • David P. Kennedy

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Charge Carriers
  • Conduction Bands
  • Electron Density
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Field Emission
  • Free Electrons
  • Metal-Semiconductor Junctions
  • P Type Semiconductors
  • Plastic Explosives
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Tank Guns
  • Valence Bands

Readers

  • Electronics Engineering
  • Materials Science and Engineering.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene