Basic Improvements in Substrate InP Material.

Abstract

Different methods for the synthesis of Indium Phosphide were devised and growths evaluated for photoluminescence, mobility, carrier concentration, and resistivity. Single crystals of InP were grown doped with Fe, Cr, Zn, and S and evaluated by photoluminescence, van der Pauw analysis and X-ray topography. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1982
Accession Number
ADA113237

Entities

People

  • S. B. Hyder

Tags

Communities of Interest

  • Advanced Electronics
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Barometric Pressure
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Diameters
  • Heat Energy
  • High Pressure
  • Materials
  • Melting Point
  • Moisture Content
  • Optical Materials
  • Semiconductor Devices
  • Semiconductors
  • Single Crystals
  • Temperature Gradients
  • Vapor Pressure
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology