Advanced Submicron FETs.

Abstract

Replacing the mushroom gate profile with a better collimated evaporation has resulted in FETs with equivalent performance. Balanced FETs have been fabricated with equivalent dc performance to their unbalanced counterparts, but with inferior rf performance. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1982
Accession Number
ADA113789

Entities

People

  • C. Hooper
  • C. Nishimoto
  • G. Zdasiuk
  • S. Bandy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Buildings And Structures
  • Citric Acid
  • Compression
  • Contracts
  • Electron Beams
  • Electron Irradiation
  • Electron Microscopes
  • Electron Scattering
  • Field Effect Transistors
  • Frequency
  • Low Noise
  • Material Degradation Processes
  • Materials
  • Military Research
  • Scanning Electron Microscopes
  • Semiconductors

Readers

  • Integrated Circuit Design and Technology.
  • Regression Analysis.
  • Solar Physics