GaAs Surface Passivation for Device Applications.
Abstract
This document is the interim report number 5 which covers the period 10/01/80 through 03/31/81 for Contract No. F33615-78-C1591 entitled 'GaAs Surface Passivation for Device Applications.' C-V and I-V measurements are reported for several GaAs (100) MIS samples. Both MBE and bulk grown GaAs samples were studied; several of the MBE grown samples had Al(1-x)Ga(x)As layers between the GaAs and insulator. Insulators formed by plasma oxidation of the Al(1-x)Ga(x)As layers and by deposition of silicon nitride were investigated. A novel As capping technique has been developed to transfer MBE grown Al(1-x)Ga(x)As samples in air into another vacuum system without surface contamination. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1981
- Accession Number
- ADA113808
Entities
People
- D. L. Miller
- K. R. Elliott
- R. W. Grant
- S. P. Kowalczyk