HgCdTe Fabrication Using Directed Energy Techniques

Abstract

The goal of this research is to produce large-area, thin-film, single crystal HgCdTe material for infrared detectors. This report describes initial results for the evaporation of CdTe onto insulating crystalline substrates (hot wall epitaxy), improvement of the surface morphology by pulsed electron-beam processing, and conversion to HgCdTe by evaporation and diffusion at constant temperature. Improvement in quality over past results and an increase in sample size to 2-inch diameter is expected with upgraded equipment described in this report.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1982
Accession Number
ADA114605

Entities

People

  • Anton C. Greenwald
  • Robert G. Wolfson

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Contracts
  • Crystal Structure
  • Crystals
  • Detectors
  • Directed Energy Weapons
  • Energy
  • Epitaxial Growth
  • Fabrication
  • Glass Transition Temperature
  • Heat Energy
  • Materials Processing
  • Measurement
  • Phase Diagrams
  • Semiconductor Devices
  • Semiconductors
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene