LSI/VLSI Ion Implanted GaAs IC Processing

Abstract

This report covers the fourth quarter of a program on LSI/VLSI ion implanted planar GaAs integrated circuit processing. The goal of this program is to realize the full potential of GaAs digital integrated circuits employing depletion mode MESFETs by developing the necessary processing methods and material capabilities to extend device complexity to VLSI. In the fourth quarter fabrication of the first wafers with mask set AR6, the last mask set to be employed with one inch wafers, was completed. Work on circuit reliability has continued, while process steps that may be limiting circuit yield are being investigated.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 10, 1982
Accession Number
ADA114798

Entities

People

  • R. Zucca

Tags

DTIC Thesaurus Topics

  • Air Force
  • Circuits
  • Contracts
  • Databases
  • Equations
  • Information Science
  • Integrated Circuits
  • Ion Implantation
  • Low Temperature
  • Materials
  • Metal-Semiconductor Junctions
  • Monte Carlo Method
  • North Carolina
  • Saturation
  • Scattering
  • Scientific Research
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Technical Research and Report Writing.