Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide

Abstract

Depth resolved photoluminescence and cathodoluminescence data were obtained from gallium arsenide implanted with 120 keV silicon ions. The luminescence data were studied as a function of depth in an effort to determine the implant damage profile of the silicon in GaAs. A chemical etchant was used to etch off successive layers of the crystal surface. The substrate material used for this study was bulk GaAs, grown by the Liquid-Encapsulated Czochralski (LEC) method.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1982
Accession Number
ADA115481

Entities

People

  • Daniel L. Deforest

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Band Theory Of Solids
  • Cells
  • Chemistry
  • Crystal Lattices
  • Electron Beams
  • Electron Guns
  • Electrons
  • Energy Bands
  • Energy Levels
  • Free Electrons
  • Ion Implantation
  • Laser Beams
  • Lasers
  • Measurement
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene