Atomic Arrangements and Electronic Properties of Semiconductor Surfaces and Interfaces.
Abstract
The areas of research during the past 12 months have included: step-formation energies and domain orientation at Si(111) surfaces; the electronic structure of the Al-GaAs(110) surface chemisorption system; density-functional calculations of bulk properties of GaAs and of (100)GaAs-Ge interfaces; demonstration of the importance of correlation effects on the atomic and electronic structure of Si(111) surfaces; and derivation of an exact scaling law for the resistance of a thin wire for the one-dimensional Anderson model containing Loth diagonal and off-diagonal disorder.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 06, 1982
- Accession Number
- ADA115683
Entities
People
- D. J. Chadi
- Richard M Martin
Organizations
- PARC