Band-Structure Dependent Impact Ionization in Silicon and Gallium Arsenide

Abstract

We have performed a Monte Carlo simulation for GaAs and Si with the realistic band structure included. Steady state impact ionization rates and drift velocities under high electric fields (> 100 kV/cm) were calculated at various temperatures.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA116011

Entities

People

  • G. J. Iafrate
  • H. Shichijo
  • J. Y. Tang
  • K. Hess

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Band Gaps
  • Band Structures
  • Collision Broadening
  • Conduction Bands
  • Electric Fields
  • Electron Energy
  • Energy Bands
  • Experimental Data
  • Gallium Arsenides
  • Ionization
  • Military Research
  • Monte Carlo Method
  • Scattering
  • Semiconductor Devices
  • Simulations
  • Steady State

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics