Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

Abstract

This report presents a new low turn-on Schottky diode, whose I-V characteristics can be controlled by an ohmic gap between Schottky-barrier regions. A survey of barrier-height control techniques and the physics of Schottky-barrier and ohmic contacts is presented. Simple design theories for two types of gap-controlled diodes are discussed. GaAs VPE growth and diode microfabrication procedures are described and results are evaluated. The I-V characteristics, temperature sensitivity, and mixer conversion loss of packaged diodes have been measured. The physical properties and evaluation results of the device are discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1982
Accession Number
ADA116162

Entities

People

  • F. J. Rosenbaum
  • R. E. Goldwasser
  • S. J. J. Teng

Organizations

  • University of Washington

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemistry
  • Compound Semiconductors
  • Detectors
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Field Emission
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Schottky Barrier Devices
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Temperature Gradients
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology