GaAs Surface Passivation for Device Applications.

Abstract

This report describes the progress achieved during a three-year program to develop deposited dielectrics for GaAs device applications. Three applications of dielectrics have been investigated within this program: (1) isolation of control electrodes, (2) passivation of the GaAs surface, and (3) encapsulation of completed circuits. Deposition techniques employed were plasma-enhanced deposition (PED), pyrolytic chemical vapor deposition (CVD), and photo-chemical deposition (PCD). Plasma-enhanced dielectrics suitable for applications (1) and (3) were developed under Hughes internal funding early in the course of the program. Accordingly, the program was streamlined to concentrate on application (2).

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1982
Accession Number
ADA116843

Entities

People

  • C. L. Anderson
  • M. D. Clark

Organizations

  • HRL Laboratories

Tags

DTIC Thesaurus Topics

  • Air Force
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Current Density
  • Dielectric Films
  • Dielectric Properties
  • Dielectrics
  • Electronics Laboratories
  • Field Effect Transistors
  • Gas Flow
  • Germanium Compounds
  • Hypervelocity Flow
  • Materials Processing
  • Measurement
  • Optical Properties
  • Refractive Index
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.