Three-Dimensional Numerical Studies of the Physics of Semiconductor Crystal Growth.
Abstract
The primary purpose of the Phase I study was to establish the feasibility of developing reliable theories with predictive capability in the area of crystal growth. Within the guidelines of the DESAT program the proposed study was limited to an area where some computational fluid dynamic studies have already appeared and where numerous experimental results have been reported; namely, the area of Czochralski crystal pulling. The intent of the study was to generalize all previously developed work, and to incorporate three-dimensional effects, which invariably arise when stirring is included. For Czochralski growth nonaxisymmetric effects were formulated and numerical simulations were performed for two cases: (1) a local hot spot on the crucible wall, and (2) angular misalignment between the crystal and crucible rotational axes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1982
- Accession Number
- ADA116861
Entities
People
- H. L. Grubin
- N. S. Liu
- S. J.. Shamroth