Advanced On-Board Signal Processor Gallium Arsenide Memory
Abstract
This report covers the second two quarters of the AOSP Memory Program. The program is focused on the development of a low power GaAs static memory technology capable of 4K bit complexity levels. During this reporting period work continued on RAM arrays using two mask sets; the first mask set (AP1) was used for preliminary RAM cell design analysis as well as for verification of layout rules. The second mask set (RM2), using the dta from AP1, focused on the design, fabrication, and evaluation of 256 bit RAMS. Processing techniques for incorporation of megohm CERMET resistors, and control of the required lower voltage were successfully demonstrated. Testing of single RAM cells, both with external and on-chip resistors, verified cell operation, established operating windows, and demonstrated the effects of resistor non- uniformities. Preliminary yield analysis for the first four wafers (224 bit undecoded arrays) showed a failure rate of approx. 1% and a circuit yield of approx. 10%.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1982
- Accession Number
- ADA117151
Entities
People
- B. M. Welch
- G. R. Kaelin
- R. Vahrenkamp
- Ricardo Zucca