The Planar Doped Barrier: A New Class of Electronic Devices.
Abstract
A new majority carrier rectifying device known as a 'planar doped barrier' (PDB) has been successfully demonstrated in GaAs. The structure has an N+-i-p+-i-n+ configuration in which an extremely narrow p+-planar region is grown in an undoped region by MBE. The barrier height can be readily varied from zero to approximately the bandgap of the semiconductor. Also, parasitic resistance and capacitance in the PDB can be independently minimized, which leads to theoretical cutoff frequencies even higher than those obtained in the best Schottky barrier mixer diodes. In addition, the capacitance of the devices is essentially constant with bias voltage over their whole operating range. The dominant transport mechanism is by majority carrier thermionic emission over the barrier for both positive and negative bias. Although the PDB concept has been experimentally demonstrated in GaAs, it is applicable to all semiconductors in general. Also, since the PDB structure is formed in a single semiconductor, the problems associated with interfaces between dissimilar materials are avoided. A variety of new device structures has already been realized through the unique characteristics of the planar doped barrier. The PDB concept is expected to have significant applications in high frequency and millimeter-wave devices, including mixer, Gunn and Baritt diodes, photodiodes, switches, FET's, and MMW transistors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1982
- Accession Number
- ADA117307
Entities
People
- Raymond L. Ross
- Robert O. Savage
- Roger J. Malik
- Thomas R. Au Coin
Organizations
- United States Army Communications-Electronics Command