CO2 Laser Waveguiding in GaAs MBE Layers.

Abstract

In this report, experimental analyses of the electronic and optical properties of a prototype single layer MBE (Molecular Beam Epitaxy) waveguide are presented. A polished (100) wafer of n(+)-GaAs heavily doped with silicon was used as the waveguide substrate. The free carrier concentration was approximately 3 x 10 to the 18th power/cc. An epitaxial layer of n-GaAs lightly doped with tin was then grown on the substrate. The carrier concentration of the epitaxial layer was targeted to be 3 - 5 x 10 to the 15th power/cc.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1982
Accession Number
ADA117394

Entities

People

  • Howard A. Jenkinson
  • John M. Zavada

Organizations

  • United States Army Armament Research, Development and Engineering Center

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Carbon Dioxide Lasers
  • Dielectric Permittivity
  • Epitaxial Growth
  • Equations
  • Films
  • Lasers
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Optical Waveguides
  • Photonic Integrated Circuits
  • Precision-Guided Munitions
  • Reflectance
  • Refractive Index
  • Standards
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Microwave Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics