Utilization of Quantum Distribution Functions for Ultra-Submicron Device Transport.
Abstract
This paper puts forth a formalism for treating ultra-submicron device transport. The formalism results in a useful and attractive methodology for describing quantum device transport in that the theory is derived from a fully quantum mechanical representation, yet implicitly contains elements of the semiclassical semiconductor transport picture. The basic three semiconductor quantum transport equations were derived using the Wigner distribution function. These transport equations were shown to contain explicit quantum corrections; these quantum corrections are non-negligible when the transit lengths of the semiconductor device are of the order of the carrier deBroglie wavelength. Since the carrier deBroglie wavelength for carriers is of the order of hundreds of angstroms in III-V device materials of interest to the Army, the quantum description of transport as described here will play a vital role in predicting the electrical behavior of present and future generation ultra-submicron devices. In future studies, theoretical efforts will be expanded to include device modeling of submicron and ultra-submicron semiconductor devices such as P-N junctions, planar doped barriers, and one- and two-dimensional superlattices; for these devices, it is clear that quantum transport will indeed be necessary to explain their semiconductor transport characteristics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1982
- Accession Number
- ADA117433
Entities
People
- G. J. Iafrate
Organizations
- United States Army Communications-Electronics Command