Equilibrium Noise in Ion Selective Field Effect Transistors.

Abstract

It has been shown that noise which is in excess of the semiconductor device noise can be identified with the electrochemical processes taking place in ISFETs. The frequency analysis of this noise yields information about interfacial capacitance and exchange current density at the membrane/solution interface. These parameters have been evaluated for several ion-selective membranes.

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Document Details

Document Type
Technical Report
Publication Date
Jul 21, 1982
Accession Number
ADA117525

Entities

People

  • Andre M. Haemmerli
  • James J. Brophy
  • Jiri Janata

Organizations

  • University of Utah

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Chemistry
  • Circuits
  • Electrical Circuits
  • Electrodes
  • Equations
  • Field Effect Transistors
  • Impedance
  • Integrated Circuits
  • Measurement
  • Metal Oxide Semiconductors
  • Metals
  • Military Research
  • New York
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Integrated Circuit Design and Technology.
  • Speech Processing/Speech Recognition.

Technology Areas

  • Microelectronics